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Transistor
2SC3940, 2SC3940A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification Complementary to 2SA1534 and 2SA1534A
5.00.2 4.00.2
Unit: mm
s Features
q
0.70.2
q
Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
Parameter Collector to base voltage Collector to 2SC3940 2SC3940A 2SC3940
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 30 60 25 50 5 1.5 1 1 150 -55 ~ +150
Unit V
0.45 -0.1
+0.15
13.50.5
s Absolute Maximum Ratings
(Ta=25C)
0.70.1
8.00.2
0.45 -0.1
+0.15
emitter voltage 2SC3940A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V A A W C C
123 2.540.15
2.30.2
V
1.27
1.27
1:Emitter 2:Collector 3:Base TO-92NL Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC3940 2SC3940A 2SC3940 2SC3940A
(Ta=25C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IB = 1A*2 IC = 500mA, IB = 50mA*2 IB = 500mA, Ia = 50mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 30 60 25 50 5 85 50 0.2 0.85 200 11
*2
min
typ
max 0.1
Unit A V
V V 340
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*1h
0.4 1.2
V V MHz
20
pF
Pulse measurement
FE1
Rank classification
Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340
Rank hFE1
1
Transistor
PC -- Ta
1.2 1.5 Ta=25C
2SC3940, 2SC3940A
IC -- VCE
1.2 VCE=10V Ta=25C 1.0
IC -- I B
Collector power dissipation PC (W)
1.0
1.25
Collector current IC (A)
0.8
1.0
8mA 7mA 6mA 5mA 4mA
Collector current IC (A)
IB=10mA 9mA
0.8
0.6
0.75
0.6
0.4
0.5
3mA 2mA
0.4
0.2
0.25
1mA
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 2 4 6 8 10 12
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 25C -25C
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 100 30 10 3 25C 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C IC/IB=10 600
hFE -- IC
VCE=10V
Forward current transfer ratio hFE
500
400
300 Ta=75C 200 25C 100 -25C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT -- IE
200
Cob -- VCB
50 120
VCER -- RBE
Collector to emitter voltage VCER (V)
IE=0 f=1MHz Ta=25C IC=10mA Ta=25C 100
160
Collector output capacitance Cob (pF)
VCB=10V Ta=25C
Transition frequency fT (MHz)
40
80
120
30
60 2SC3940A 40 2SC3940 20
80
20
40
10
0 -1
0 -3 -10 -30 -100 1 3 10 30 100
0 0.1
0.3
1
3
10
30
100
Emitter current IE (mA)
Collector to base voltage VCB (V)
Base to emitter resistance RBE (k)
2
Transistor
ICEO -- Ta
104 VCE=10V 10 3 ICP 103
2SC3940, 2SC3940A
Area of safe operation (ASO)
Single pulse Ta=25C
Collector current IC (A)
1 0.3
IC t=10ms t=1s
ICEO (Ta) ICEO (Ta=25C)
102
0.1 0.03 0.01 0.003
10
1 0 20 40 60 80 100 120 140 160
0.001 0.1
0.3
1
3
10
30
2SC3940A
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
2SC3940
3
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2001 MAR

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